PART |
Description |
Maker |
2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
|
2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
2SA1010 2SA1010-15 |
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
SPT6503 SPT6502 |
HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
http:// SSDI[Solid States Devices, Inc]
|
KSC5302D KSC5302DTU |
NPN Silicon Transistor High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32 TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32 Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No JT 55C 55#22M SKT PLUG HIGH SPEED SRAM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
BUL56A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
BUL53BSMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
BUL64A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
BUL57A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速,饱和硅晶体管开关进步党(高速,饱和开关型进步党硅晶体管)
|
TT electronics Semelab, Ltd. STMicroelectronics N.V. SEME-LAB[Seme LAB]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
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